MTW32N25E 데이터 시트보기 (PDF) - Motorola => Freescale
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MTW32N25E Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTW32N25E
64
TJ = 25°C
VGS = 10 V
56
9V
48
40
32
24
7V
8V
6V
64
VDS ≥ 10 V
56
48
40
32
24
TJ = – 55°C
25°C
100°C
16
16
5V
8
8
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
0
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
VGS = 10 V
0.14
0.12
TJ = 100°C
0.1
0.08
25°C
0.06
0.04
– 55°C
0.02
0
8
16 24 32 40 48 56 64
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.084
0.08
TJ = 25°C
0.076
0.072
0.068
VGS = 10 V
15 V
0.064
0 8 16 24 32 40 48 56 64
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 2.0 A
1.6
1.2
10000
VGS = 0 V
1000
100
TJ = 125°C
100°C
0.8
0.4
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
25°C
1
0
50
100
150
200
250
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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