DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CXD1175AP 데이터 시트보기 (PDF) - Sony Semiconductor

부품명
상세내역
제조사
CXD1175AP
Sony
Sony Semiconductor Sony
CXD1175AP Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CXD1175AM/AP
Electrical Characteristics
Analog characteristics
(Fc = 20MSPS, VDD = 5V, VRB = 0.5V, VRT = 2.5V, Ta = 25°C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Conversion speed
Fc
Analog input band width
(–1dB)
BW
Offset voltage1
EOT
EOB
Integral non-linearity error EL
Differential non-linearity error ED
Differential gain error
DG
Differential phase error
DP
Aperture jitter
taj
Sampling delay
tsd
VDD = 4.75 to 5.25V
Ta = –40 to +85°C
VIN = 0.5 to 2.5V
fIN = 1kHz ramp
Envelope
Potential difference to VRT
Potential difference to VRB
End point
NTSC 40 IRE mod ramp
Fc = 14.3MSPS
0.5
20 MSPS
18
MHz
–10 –35 –60
mV
0 +15 +45
+0.5 +1.3
LSB
±0.3 ±0.5
1.0
%
0.5
deg
30
ps
4
ns
1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage
drops equivalent to 1/2 LSB of the voltage when the output data changes from “00000000” to “00000001”.
EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to
1/2LSB of the voltage when the output data changes from “11111111” to “11111110”.
–5–

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]