LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

Sharp Electronics 

8M (512K × 16, 1M × 8) Flash Memory

LH28F800SU

DC Characteristics

VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C

3/5 » Pin Set Low for 5 V Operations

SYMBOL

PARAMETER

IIL

Input Load Current

ILO Output Leakage Current

TYP.

5

ICCS VCC Standby Current

2

ICCD

VCC Deep Power-Down

Current

1

ICCR1 VCC Read Current

50

ICCR2 VCC Read Current

30

ICCW VCC Write Current

25

ICCE VCC Block Erase Current 18

ICCES

VCC Erase Suspend

Current

5

IPPS VPP Standby Current

IPPD

VPP Deep Power-Down

Current

0.2

MIN.

MAX. UNITS

TEST CONDITIONS

NOTE

±1

µA VCC = VCC MAX., VIN = VCC or GND 1

±10

µA VCC = VCC MAX., VIN = VCC or GND 1

VCC = VCC MAX.,

10

µA CE »0, CE »1, RP » = VCC ±0.2 V

BYTE, WP, 3/5 » = VCC ±0.2 V or GND

±0.2 V

1,4

VCC = VCC MAX.,

4

mA CE »0, CE »1, RP » = VIH

BYTE, WP, 3/5 » = VIH or VIL

5

µA RP » = GND ±0.2 V

1

VCC = VCC MAX.,

CMOS: CE »0, CE »1 = GND ±0.2 V

BYTE = GND ±0.2 V or VCC ±0.2 V

60

mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4

TTL: CE »0, CE »1 = VIL,

BYTE = VIL or VIH

Inputs = VIL or VIH

f = 10 MHz, IOUT = 0 mA

VCC = VCC MAX.,

CMOS: CE »0, CE »1 = GND ±0.2 V

BYTE = VCC ±0.2 V or GND ±0.2 V

35

mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4

TTL: CE »0, CE »1 = VIL,

BYTE = VIH or VIL

Inputs = VIL or VIH

f = 5 MHz, IOUT = 0 mA

35

mA Word/Byte Write in Progress

1

25

mA Block Erase in Progress

1

10

mA CE »0, CE »1 = VIH

1, 2

Block Erase Suspended

±10

µA VPP ≤ VCC

1

5

µA RP » = GND ±0.2 V

1

21

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