LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
AC Characteristics for WE » - Controlled Command Write Operations1 (Continued)
TA = 0°C to +70°C
SYMBOL
PARAMETER
VCC = 5.0 ± 0.25 V
VCC = 5.0 ± 0.5 V
UNITS
TYP. MIN. MAX. TYP. MIN. MAX.
NOTE
tAVAV
tVPWH
tPHEL
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
tRHPL
Write Cycle Time
VPP Setup to WE Going High
RP » Setup to CE » Going Low
CE » Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
WE High to RY »/BY » Going Low
RP » Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
70
100
480
0
50
50
40
0
10
10
30
0
100
0
80
ns
100
ns
3
480
ns
0
ns
50
ns
2, 6
50
ns
2, 6
50
ns
0
ns
2
10
ns
2
10
ns
30
ns
0
ns
100 ns
0
ns
3
tPHWL RP» High Recovery to WE Going Low
1
tWHGL Write Recovery before Read
60
tQVVL
VPP Hold from Valid Status Register (CSR,
GSR, BSR) Data and RY»/BY» High
0
tWHQV1
tWHQV2
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
8 4.5
0.3
1
65
0
8 4.5
0.3
µs
ns
µs
µs
4, 5
s
4
NOTES:
CE » is defined as the latter of CE »0 or CE »1 going Low or the first of CE »0 or CE »1 going High.
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Word/Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE » for all Command Write Operations.
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