LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

Sharp Electronics 

LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

DC Characteristics (Continued)

VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C

3/5 » Pin Set Low for 5 V Operations

SYMBOL

PARAMETER

TYPE

MIN.

MAX. UNITS

TEST CONDITIONS

IPPR VPP Read Current

65

IPPW VPP Write Current

40

200

µA VPP > VCC

60

mA

VPP = VPPH, Word/Byte

Write in Progress

IPPE VPP Erase Current

20

40

mA

VPP = VPPH,

Block Erase in Progress

IPPES

VPP Erase Suspend

Current

65

200

µA

VPP = VPPH,

Block Erase Suspended

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

VOH1

VOH2

VPPL

Output High Voltage

VPP during Normal

Operations

-0.5

0.8

V

2.0

VCC + 0.5 V

0.45

V

VCC = VCC MIN. and

IOL = 5.8 mA

0.85 VCC

V

IOH = -2.5 mA

VCC = VCC MIN.

VCC - 0.4

V

IOH = -100 µA

VCC = VCC MIN.

0.0

5.5

V

VPPH

VPP during Write/Erase

Operations

5.0

4.5

5.5

V

VLKO

VCC Erase/Write

Lock Voltage

2.0

V

NOTE

1

1

1

1

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, VPP = 5.0 V, T = 25°C. These currents are valid for all

product versions (package and speeds).

2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of

ICCES and ICCR.

3. Automatic Power Saving (APS) reduces ICCR to less than 2 mA in Static operation.

4. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.

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