SPI07N60S5 데이터 시트보기 (PDF) - Infineon Technologies
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SPI07N60S5 Datasheet PDF : 10 Pages
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Final data
Cool MOS™ Power Transistor
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Optimized capacitances
• Improved noise immunity
P-TO262
SPI07N60S5
SPP07N60S5, SPB07N60S5
Product Summary
VDS @ Tjmax 650 V
RDS(on)
0.6 Ω
ID
7.3 A
P-TO263-3-2
P-TO220-3-1
Type
Package
Ordering Code Marking
SPP07N60S5
P-TO220-3-1 Q67040-S4172 07N60S5
SPB07N60S5
P-TO263-3-2 Q67040-S4185 07N60S5
G,1
SPI07N60S5
P-TO262
Q67040-S4328 07N60S5
Maximum Ratings, at Tc = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain current 1)
TC=25°C
ID
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax) EAR
ID = 7.3 A , VDD = 50 V
Avalanche current (repetitive, limited by Tjmax)
Reverse diode dv/dt
IAR
dv/dt
Value
7.3
4.6
14.6
230
0.5
7.3
6
IS=7.3A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
±20
83
-55... +150
D,2
S,3
Unit
A
mJ
A
kV/µs
V
W
°C
1
2002-07-26
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