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STPS2H100UY 데이터 시트보기 (PDF) - STMicroelectronics

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STPS2H100UY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS2H100UY Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STPS2H100-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
Average forward current versus
ambient temperature (δ = 0.5)
(SMA / SMB)
PF(AV)(W)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IF(AV)(A)
2.2
2.0
1.8
1.6
SMA
1.4
Rth(j-a)=100°C/W
S(CU)=1.5cm2
1.2
1.0
0.8
Rth(j-a)=Rth(j-I)
SMB
Rth(j-a)=80°C/W
S(CU)=1.5cm2
SMA
SMB
0.6
T
0.4
0.2
0.0
0
δ=tp/T
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
IM(A)
10
SMA
9
8
7
6
Ta=25°C
5
Ta=75°C
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=125°C
1.E+00
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
IM(A)
10
SMB
9
8
7
Ta=25°C
6
5
Ta=75°C
4
3
Ta=125°C
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
1.E+00
Doc ID 17944 Rev 1
3/9

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