TAT7430B 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TAT7430B Datasheet PDF : 7 Pages
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TAT7430B
CATV 75 Ω pHEMT High Gain RF Amplifier
Applications
Single-ended and Push-pull Optical Receivers
Low-noise Drop Amplifiers
Distribution Amplifiers
Multi-Dwelling Units
Single-ended Gain Block
Product Features
High typical gain of 22 dB in application circuit
On-chip active bias for consistent bias current and
repeatable performance
50 – 1200 MHz bandwidth
Low noise: typical NF < 2.2 dB to 1000MHz
Flexible 5 V to 8 V biasing
IDD(8V) = 190 mA typical in application circuit
+41 dBm typical OIP3
+65 dBm typical OIP2
+22 dBm typical P1dB
Low distortion: CSO -61 dBc, CTB -81 dBc
(10 dBmV/ch at input, 80 ch NTSC flat)
pHEMT device technology
SOT-89 package
General Description
The TAT7430B is a low cost RF amplifier designed for
applications from DC to 1200 MHz. The balance of low
noise and distortion provides an ideal solution for a wide
range of broadband amplifiers used in cable television
applications.
It is particularly well suited for new home networks
requiring higher gain for a large number of splits. In
addition, the TAT7430B’s combination of high gain, low
noise, and good return loss make it an excellent choice for
optical receiver applications and low noise front ends.
An internal bias circuit mitigates the effect of temperature
and process variation. The bias current can be adjusted
with an external resistor. It is able to work in low noise
applications from a 5 V supply.
The TAT7430B is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
excellent gain and return loss consistency inherent to the
pHEMT process.
SOT-89 package
Functional Block Diagram
RF IN
GND
RFOUT
Pin Configuration
Pin #
1
2
3
4
Symbol
RF IN
GND
RF OUT
GND PADDLE
Ordering Information
Part No.
TAT7430B
TAT7430B-EB
Description
75 High linearity pHEMT amplifier
(lead-free/RoHS compliant SOT-89 Pkg)
Amplifier evaluation board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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