TGA8349 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA8349

Gain Block Amplifier

TriQuint Semiconductor 

TGA8349-SCC

TYPICAL

RETURN LOSS

ABSOLUTE

MAXIMUM RATINGS

0

VV++ ==88VV

VCCTTRRLL==11.5.5VV

I+I +==8800mmAA

10

TAA == 2255°°C

20

30

40

50

0

2

4

6

8

10

12

14

Frequency (GHz)

IInnppuutt

OOuuttppuutt

Positive supply voltage, V+ .................................................................................................................. 13 V

Positive supply voltage range with respect to negative supply voltage, V+ - V – .............................. 0 V to 13 V

Positive supply voltage range with r espect to gain control voltage, VCTRL - V+ .............................. 0 V to - 13 V

Negative supply voltage range, VG1 ............................................................................................ - 5 V to 0 V

Gain control voltage range, VCTRL ................................................................................................ - 5 V to 4 V

Positive supply current, I+ .............................................................................................................. 144 mA

Power dissipation, PD, at (or below) 25°C base-plate temperatur e* ...................................................... 2.6 W

Input continuous wave power, PIN .................................................................................................... 23 dBm

Operating channel temperature, TCH** ......................................................... ..................................... 150°C

Mounting temperature (30 sec), TM .................................................................................................. 320°C

Storage temperature range, TSTG ............................................................................................ - 65 to 150°C

Ratings over channel temperatur e range, TCH (unless otherwise noted)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond

those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for

extended periods may affect device reliability.

* For operation above 25°C base -plate temperature, derate linearly at the rate of 5.5 mW/5C.

** Operating channel temperature directly af fects the device MTTF. For maximum life, it is r ecommended that

channel temperature be maintained at the lowest possible level.

3

TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com

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