TGA8399C 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA8399C

8 - 18 GHz Wideband Driver Amplifier

TriQuint Semiconductor 

TABLE I

MAXIMUM RATINGS

Product Data Sheet

August 5, 2008

TGA8399C

Symbol

V+

I+

| IG |

PIN

PD

TCH

TM

TSTG

Parameter 1/

Positive Supply Voltage

Positive Supply Current

Gate Supply Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 seconds)

Storage Temperature

Value

8V

180 mA

3.52 mA

17.0 dBm

0.94 W

150 °C

320 °C

-65 °C to 150 °C

Notes

2/

2/

2/

2/, 3/

4/, 5/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power

shall not exceed PD.

3/ When operated at this bias condition with a base plate temperature of 70 °C, the

median life is 1 E+6 hours.

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained

at the lowest possible levels.

5/ These ratings apply to each individual FET.

2

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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