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TGA2505 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA2505
TriQuint
TriQuint Semiconductor TriQuint
TGA2505 Datasheet PDF : 12 Pages
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TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V to 0V
1300 mA
18 mA
24 dBm
10.5 W
200 0C
320 0C
-65 to 150 0C
TGA2505
Notes
2/
2/
2/
2/ 3/
4/ 5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70°C, the
median life is 2.3E4.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure
(Tm). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE TEST
(TA = 25 °C, Nominal)
NOTES SYMBOL
1/
IDSS
1/
GM
2/
|VP|
2/
|VBVGS|
2/
|VBVGD|
LIMITS
MIN
MAX
80
381
175
425
0.5
1.5
8
30
13
30
UNITS
mA
mS
V
V
V
1/ Measurements are performed on a 800μm FET.
2/ VP, VBVGD, and VBVGS are negative.
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -

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