BF908 데이터 시트보기 (PDF) - Philips Electronics
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BF908 Datasheet PDF : 8 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF908; BF908R
FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
handbook, halfpage
4
3
d
g2
g1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
1
2
such as television tuners and professional
s,b
communications equipment.
Top view
MAM039
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (SOT143) and
symbol; BF908.
handbook, halfpag3e
4
d
g2
g1
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
21
Top view
s,b
MAM040
Fig.2 Simplified outline (SOT143R) and
symbol; BF908R.
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
−
−
−
−
36
2.4
20
−
TYP.
−
−
−
−
43
3.1
30
1.5
MAX.
12
40
200
150
50
4
45
2.5
UNIT
V
mA
mW
°C
mS
pF
pF
dB
1996 Jul 30
2
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