2N2102 데이터 시트보기 (PDF) - Comset Semiconductors
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2N2102 Datasheet PDF : 3 Pages
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NPN 2N2102
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
IEBO
VCBO
Collector Cutoff Current
VCB= 60 V
IE= 0
Tamb= 25°C
-
-
Tamb= 150°C -
-
Emitter Cutoff Current VEB= 5 V, IC= 0
-
-
Collector Base
Sustaining Voltage
IC= 100 µA, IE= 0
120 -
2 nA
2 µA
5 nA
-
V
VCEO
Collector Emitter
Sustaining Voltage (*)
IC= 30 mA, IB= 0
65 -
-
V
hFE
DC Current Gain (*)
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 10 µA, VCE= 10 V
IC= 0.1 mA, VCE= 10 V
IC= 10 mA, VCE= 10 V
IC= 150 mA, VCE= 10 V
IC= 500 mA, VCE= 10 V
IC= 1 A, VCE= 10 V
IC= 150 mA, IB= 15 mA
10 -
-
20 -
-
35
40
-
-
120
-
25 -
-
10 -
-
-
- 0.5 V
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC= 150 mA, IB= 15 mA
-
- 1.1 V
CC
Collector Capacitance
IE= 0 ,VCB= 10 V
f = 1MHz
-
- 15 pF
Ce
emitter Capacitance
IC= 0 ,VEB= 0.5 V
f = 1MHz
-
- 80 pF
(*) Pulse conditions : tp < 300 µs, δ =2%.
2|3
24/09/2012
COMSET SEMICONDUCTORS
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