BUK9605-30A 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9605-30A Datasheet PDF : 13 Pages
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BUK9605-30A
N-channel TrenchMOS logic level FET
100
Pder
(%)
80
60
40
20
0
0
003aag051
40
80
120
160
200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0
003aag052
40
80
120
160
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
VGS ≥ 5 V
Normalized continuous drain current as a
function of mounting base temperature
103
IDM RDS(on) = VDS / ID
(A)
102
D.C.
10
003aag053
tp = 100 μs
1 ms
10 ms
100 ms
120
WDSS
(%) 100
80
60
40
003aag066
20
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
0
20
60
100
140
180
Tmb (°C)
ID = 75 A
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK9605-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2011
© Nexperia B.V. 2017. All rights reserved
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