Nexperia
BUK9605-30A
N-channel TrenchMOS logic level FET
20
C
(fF)
15
003aag063
10
Ciss
5
Coss
0
10-2
10-1
1
Crss
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
5
VGS
(V)
4
3
003aag064
VDS = 14 V
VDS = 24 V
2
1
0
0
40
80
120
QG (nC)
Tj = 25 °C; ID = 50 A
Fig 15. Gate-source voltage as a function of gate
charge; typical values
100
IF
(A)
80
003aag065
60
Tj = 175 °C
40
20
Tj = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
VSDS (V)
VGS = 0 V
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK9605-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2011
© Nexperia B.V. 2017. All rights reserved
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