DB4 데이터 시트보기 (PDF) - Unspecified
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DB4 Datasheet PDF : 2 Pages
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RoHS
DB3-DB6
SILICON BIDIRECTIONAL DIAC
WEJ ELECTRONIC CO.,LTD FEATURE
The three layer ,two terminal,axial lead,hermetically sealed
diacs are designed specifically for triggering thyristors.They
demonstrate low breakover current at breakover voltage as
they withstand peak pulse current The breakover symmetry is
within three volts(DB3,DC34,DB4)or four volts(DB6).These
diacs are intended for use in thyrisitors phase control,circuits
for lamp dimming.universal motor speed control,and heat control.
JF S DB3/DC34/DB4/DB6 are bi-directional trigged diode designed
to operate in conjunction with Triacs and SCR s
DO-35(GLASS)
1.083(27.5)
MIN
0.079(2.0)
MAX
DIA
0.150(3.8)
MAX
1.083(27.5)
MIN
0.020(0.52)
MAX
DIA
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Parameters
Pc
Power Dissipation on printed
TA= 50 OC
Circuit(L=10mm)
ITRM
Repetitive peak on-state
Current
tp=10 s
F=100Hz
TSTG/TJ Storage and Operating Junction Temperature
DB3
2.0
Value
DC34
DB4
150
DB6
2.0
2.0
16
-40 to+125/-40 to 110
Units
mW
A
OC
ELECTRICAL CHARACTERISTICS
Symbols
Parameters
VBO
Breakover Voltage(Note2)
I + VBO I-
I - VBO I
I+ VI
VO
IBO
tr
Breakover Voltage Symmetry
Dynamic Breakover Voltage(Note 1)
Output Voltage (Note 1)
Breakwver Current(Note 1)
Rise Time (Note1)
Test Conditions
Min
C=22nF(Note2) Typ
See diagram 1
Max
C=22nF(Note2)
Max
See diagram 1
I=(Iso to IF=10mA)
See Diagram 1
Min
See Diagram 2
Min
C=22nF(Note2) Max
See Diagram 3
Tip
Value
28
30
35
32
34
40
36
38
45
+_ 3
5
5
100
1.5
56
60
70
+_ 4
10
Units
V
V
V
V
A
S
IB
Leakage Current(Note1)
VB=0.5VBO max
see diagrom1
Max
10
A
Notes:1.Electrical characteristics applicable in both forward and reverse direclions.
2.Connected in parallel with the devices.
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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