FM25C160B-G(2018) 데이터 시트보기 (PDF) - Cypress Semiconductor
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FM25C160B-G Datasheet PDF : 21 Pages
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FM25C160B
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +7.0 V
Input voltage ............. –1.0 V to +7.0 V and VIN < VDD+1.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VDD + 2.0 V
Package power dissipation capability
(TA = 25 °C) ................................................................. 1.0 W
Surface mount lead soldering temperature
(3 seconds) .............................................................. +260 C
DC output current
(1 output at a time, 1s duration) .................................. 15 mA
Electrostatic Discharge Voltage [3]
Human Body Model (AEC-Q100-002 Rev. E) ................... 2 kV
Charged Device Model (AEC-Q100-011 Rev. B) .............. 500 V
Latch-up current .................................................... > 140 mA
Operating Range
Range
Industrial
Ambient Temperature (TA)
VDD
–40 C to +85 C
4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
VDD
Power supply
IDD
VDD supply current
4.5
SCK toggling between fSCK = 1 MHz
–
VDD – 0.3 V and VSS,
other inputs VSS or
fSCK = 20 MHz
–
VDD – 0.3 V.
SO = Open.
ISB
ILI
ILO
VIH
VIL
VOH
VOL
VHYS[5]
VDD standby current
Input leakage current
Output leakage current
Input HIGH voltage
Input LOW voltage
CS = VDD. All other inputs VSS or VDD.
–
VSS < VIN < VDD
–
VSS < VOUT < VDD
–
0.7 × VDD
– 0.3
Output HIGH voltage
IOH = –2 mA
Output LOW voltage
IOL = 2 mA
Input Hysteresis (CS and SCK
pin)
VDD – 0.8
–
0.05 × VDD
Typ [4]
5.0
–
–
4
–
–
–
–
–
–
–
Max Unit
5.5
V
0.25
mA
4
mA
10
A
±1
A
±1
A
VDD + 0.3 V
0.3 × VDD V
–
V
0.4
V
–
V
Notes
3. Electrostatic Discharge voltages specified in the datasheet are the JEDEC standard limits used for qualifying the device. To know the maximum value device passes
for, please refer to the device qualification report available on the website.
4. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
5. This parameter is characterized but not 100% tested.
Document Number: 001-84472 Rev. *I
Page 11 of 21
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