FDS3680 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3680 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 6A
8
6
VDS = 15V
30
50V V
4
2
0
0
5
10
15
20
25
30
35
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
3000
2500
2000
1500
1000
500
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
50
SINGLE PULSE
40
RθJA = 125oC/W
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
S in gle Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t 1, TI ME (s e c)
R θJA (t) = r(t) * R θJA
R θJA = 125°C/ W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3680 Rev C (W)
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