STPS40M100C(2010) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40M100C Datasheet PDF : 8 Pages
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STPS40M100C
Characteristics
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current per diode
versus ambient temperature
(δ = 0.5)
PF(AV)(W)
20
18
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
IF(AV)(A)
22
20
Rth(j-a)=Rth(j-c)
16
18
14
16
14
12
12
10
10
Rth(j-a)=15 °C/W
8
8
6
T
6
T
4
4
2
IF(AV)(A)
δ=tp/T
tp
2
δ=tp/T
tp
Tamb(°C)
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
0
25
50
75
100
125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
P ARM(t p)
P ARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
t p(µs)
1
10
100
1000
P ARM(T j)
P ARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
T j(°C)
50
75
100
125
150
Figure 6.
IM(A)
350
300
250
200
150
100
IM
50
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values per diode)
t
t(s)
δ =0.5
1.E-02
1.E-01
Tc=25 °C
Tc=75 °C
Tc=125 °C
1.E+00
Figure 7.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Doc ID 15522 Rev 3
3/8
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