13NM60N(2011) 데이터 시트보기 (PDF) - STMicroelectronics

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13NM60N
(Rev.:2011)

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET

STMicroelectronics 

STL13NM60N

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV

MDmesh™ II Power MOSFET

Features

Order code

STL13NM60N

VDSS @

TJmax

650 V

RDS(on)

max

< 0.385 Ω

ID

10 A (1)

1. The value is rated according to Rthj-case

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

Switching applications

Description

This device is a N-channel Power MOSFETs

made using the second generation of MDmesh™

technology. This revolutionary transistor

associates a new vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

3

3

3

'

"OTTOMVIEW

$

0OWER&,!4˜X (6

Figure 1. Internal schematic diagram

$

'

3

!-V

Table 1. Device summary

Order code

STL13NM60N

Marking

13NM60N

Package

PowerFLAT™ (8x8) HV

Packaging

Tape and reel

May 2011

Doc ID 018870 Rev 1

1/14

www.st.com

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