SGB15N120 데이터 시트보기 (PDF) - Infineon Technologies

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SGB15N120

Fast IGBT in NPT-technology

Infineon Technologies 

SGP15N120 SGP15N120

SGW15N120

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=800V,IC=15A,

VGE=15V/0V,

RG=33Ω,

Lσ1)=180nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

18

23

580

22

1.1

0.8

1.9

Unit

max.

24 ns

30

750

29

1.5 mJ

1.1

2.6

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=800V,

IC=15A,

VGE=15V/0V,

RG=33Ω,

Lσ1)=180nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

38

30

652

31

1.9

1.5

3.4

Unit

max.

46 ns

36

780

37

2.3 mJ

2.0

4.3

1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors

3

Jul-02

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