SGB15N120 데이터 시트보기 (PDF) - Infineon Technologies

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SGB15N120

Fast IGBT in NPT-technology

Infineon Technologies 

1000ns

td(off)

SGP15N120 SGP15N120

SGW15N120

1000ns

td(off)

100ns

tf

t

d(on)

tr

10ns

0A

10A 20A 30A 40A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 3 3 Ω,

dynamic test circuit in Fig.E )

1000ns

td(off)

100ns

td(on)

tr

tf

10ns

-50°C

0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 15A, RG = 3 3 Ω,

dynamic test circuit in Fig.E )

100ns

tf

tr

td(on)

10ns

0Ω

25Ω

50Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 15A,

dynamic test circuit in Fig.E )

6V

5V

max.

4V

typ.

3V

min.

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.3mA)

Power Semiconductors

6

Jul-02

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