10N80K5(2014) 데이터 시트보기 (PDF) - STMicroelectronics

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10N80K5
(Rev.:2014)

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF10N80K5

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5

Power MOSFET in a TO-220FP package

Datasheet - production data

Features

Order code VDS

STF10N80K5 800 V

RDS(on) max

0.600 Ω

ID PTOT

9 A 30 W

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

AM01476v1

• Industry’s best RDS(on)

• Industry’s best figure of merit (FoM)

• Ultra-low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This very high voltage N-channel Power MOSFET

is designed using MDmesh™ K5 technology

based on an innovative proprietary vertical

structure. The result is a dramatic reduction in on-

resistance and ultra-low gate charge for

applications requiring superior power density and

high efficiency.

Order code

STF10N80K5

Table 1. Device summary

Marking

Package

10N80K5

TO-220FP

Packaging

Tube

November 2014

This is information on a product in full production.

DocID026564 Rev 4

1/14

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