10N80K5(2014) 데이터 시트보기 (PDF) - STMicroelectronics

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10N80K5
(Rev.:2014)

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Symbol

Parameter

Table 4. On/off states

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current

IGSS

VGS(th)

RDS(on)

Gate body leakage current

Gate threshold voltage

Static drain-source on-

resistance

VGS= 0, ID = 1 mA

VGS = 0, VDS = 800 V

VGS = 0, VDS = 800 V,

Tc=125 °C

VDS = 0, VGS = ± 20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID= 4.5 A

STF10N80K5

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

0.470 0.600 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =100 V, f =1 MHz,

VGS =0

- 635 - pF

- 53 - pF

- 0.8 - pF

Co(tr)(1)

Co(er)(2)

Equivalent capacitance time

related

Equivalent capacitance

energy related

VGS = 0, VDS = 0 to 640 V

- 85 - pF

- 34 - pF

RG Intrinsic gate resistance

f = 1 MHz, ID=0

-

6

-

Ω

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 9 A

VGS =10 V

(see Figure 16)

- 22 - nC

- 5.5 - nC

- 13.2 - nC

1. “Time related” is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. “Energy related” is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/14

DocID026564 Rev 4

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