BF1202WR,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1202WR,115 Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R; BF1202WR
20
handbook, halfpage
ID
(mA)
16
12
8
VG2-S = 4 V
3.5 V
3V
MCD952
2.5 V
2V
1.5 V
4
1V
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
VDS = 5 V.
Tj = 25 C.
Fig.5 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MCD953
VG1-S = 1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
0.9 V
0
0
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 C.
Fig.6 Output characteristics; typical values.
100
handbook, halfpage
IG1
(μA)
80
VG2-S = 4 V
MCD954
3.5 V
3V
60
2.5 V
40
2V
20
1.5 V
1V
0
0
0.5
1
1.5
2
2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
2010 Sep 16
handbook,4h0alfpage
yfs
(mS)
30
MCD955
3.5 V
VG2-S = 4 V
3V
20
2.5 V
10
0
0
4
2V
8
12
16
20
ID (mA)
VDS = 5 V.
Tj = 25 C.
Fig.8 Forward transfer admittance as a function
of drain current; typical values.
5
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