DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NX3P1107 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명
상세내역
제조사
NX3P1107
NXP
NXP Semiconductors. NXP
NX3P1107 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NX3P1107
Logic controlled high-side power switch
Rev. 1 — 9 January 2013
Product data sheet
1. General description
The NX3P1107 is a high-side load switch which features a low ON resistance P-channel
MOSFET that supports more than 1.5 A of continuous current. Designed for operation
from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power
dissipation and extend battery life. The enable logic includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
The NX3P1107 is ideal for portable, battery operated applications due to low ground
current and ultra-low OFF-state current.
2. Features and benefits
Wide supply voltage range from 0.9 V to 3.6 V
Very low ON resistance:
34 mat a supply voltage of 3.3 V
High noise immunity
Low OFF-state leakage current (2.0 A maximum)
1.2 V control logic at a supply voltage of 3.6 V
High current handling capability (1.5 A continuous current)
Turn-on slew rate limiting
ESD protection:
HBM JESD22-A114F Class 3A exceeds 4000 V
CDM AEC-Q100-011 revision B exceeds 500 V
Specified from 40 C to +85 C
3. Applications
Cell phone
Digital cameras and audio devices
Portable and battery-powered equipment

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]