NX3P1107 데이터 시트보기 (PDF) - NXP Semiconductors.
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NX3P1107 Datasheet PDF : 16 Pages
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NXP Semiconductors
NX3P1107
Logic controlled high-side power switch
13. Dynamic characteristics
Table 10. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 16.
Symbol Parameter
Conditions
Tamb = 25 C
Min
Typ
Max
Unit
ten
enable time
EN to VOUT; see Figure 15
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
tdis
disable time
EN to VOUT; see Figure 15
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
ton
turn-on time
EN to VOUT; see Figure 15
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
toff
turn-off time
EN to VOUT; see Figure 15
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
tTLH
LOW to HIGH output
VOUT; see Figure 15
transition time
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
tTHL
HIGH to LOW output
VOUT; see Figure 15
transition time
VI(VIN) = 1.8 V
VI(VIN) = 3.3 V
-
120
-
s
-
70
-
s
-
5.6
-
s
-
5.8
-
s
-
220
-
s
-
150
-
s
-
118
-
s
-
118
-
s
-
100
-
s
-
80
-
s
-
112.5
-
s
-
112.5
-
s
13.1 Waveform and test circuits
9,
(1 LQSXW
*1'
WHQ
92+
9287 RXWSXW
*1'
90
WRQ
9;
W7/+
WRII
WGLV
9<
W7+/
DDD
Measurement points are given in Table 11.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 15. Switching times
NX3P1107
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 January 2013
© NXP B.V. 2013. All rights reserved.
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