STF13N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STF13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF13N60M2, STFI13N60M2

Electrical characteristics

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

(1)

ISDM

(2)

VSD

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 11 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/μs

VDD = 60 V (see Figure 16)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/μs

VDD = 60 V, Tj=150 °C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

-

11 A

-

44 A

-

1.6 V

- 297

ns

- 2.8

μC

- 18.5

A

- 394

ns

- 3.8

μC

- 19

A

DocID023939 Rev 4

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