STF13N60M2 데이터 시트보기 (PDF) - STMicroelectronics
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STF13N60M2
STMicroelectronics
STF13N60M2 Datasheet PDF : 14 Pages
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STF13N60M2, STFI13N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
VDS
10
VDD=480V
ID=11A
AM15716v1
VDS
(V)
500
8
400
6
300
4
200
2
100
Figure 9. Capacitance variations
C
(pF)
AM15717v1
1000
Ciss
100
Coss
10
1
Crss
0
0
0
4
8
12
16 Qg(nC)
0.1
0.1
1
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15718v1
1.1
ID=250µA
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
ID=5.5 A
VGS=10V
AM15719v1
1.0
1.7
0.9
1.3
0.8
0.7
0.9
0.6
-50
0
50
100
TJ(°C)
0.5
-50
0
50
100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD (V)
1
TJ=-50°C
AM15720v1
0.9
TJ=25°C
0.8
0.7
TJ=150°C
0.6
Figure 13. Output capacitance stored energy
Eoss(µJ)
AM15721v1
4
3
2
1
0.5
0
2
4
6
8
10 ISD(A)
0
0 100 200 300 400 500 VDS(V)
DocID023939 Rev 4
7/14
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