40N60A4D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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40N60A4D Datasheet PDF : 10 Pages
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HGT1N40N60A4D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Noted
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .VISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
HGT1N40N60A4D
600
110
45
300
±20
±30
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
UNITS
V
A
A
A
V
V
W
W/oC
V
oC
N-m
N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Diode Forward Voltage
BV CES
I CES
V CE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
V EC
IC = 250µA, VGE = 0V
VCE = BVCES
TJ = 25oC
TJ = 125oC
IC = 40A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
IC = 40A, VCE = 0.5 BVCES
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE =15V
RG = 2.2Ω
L = 200µH
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)
IEC = 40A
MIN TYP MAX UNITS
600
-
-
V
-
-
250
µA
-
-
3.0
mA
-
1.7
2.7
V
-
1.5
2.0
V
4.5
5.6
7
V
-
-
±250
nA
200
-
-
A
-
8.5
-
V
-
350
405
nC
-
450
520
nC
-
25
-
ns
-
18
-
ns
-
145
-
ns
-
35
-
ns
-
400
-
µJ
-
850
-
µJ
-
370
-
µJ
-
27
-
ns
-
20
-
ns
-
185
225
ns
-
55
95
ns
-
400
-
µJ
-
1220 1400
µJ
-
660
775
µJ
-
2.25
2.7
V
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
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