FDC640P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC640P Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -4.5A
4
3
2
1
0
0
2
VDS = -5V
-15V
-10V
4
6
8
Qg, GATE CHARGE (nC)
10
12
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
400
200
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
SINGLE PULSE
4
RθJA = 156°C/W
TA = 25°C
3
2
1
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDC640P Rev E(W)
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