RN2101MFV 데이터 시트보기 (PDF) - Toshiba
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RN2101MFV Datasheet PDF : 8 Pages
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RN2101MFV∼RN2106MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff
current
Emitter cutoff current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2101MFV to
2106MFV
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
RN2101MFV to
2106MFV
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
RN2101MFV to
2104MFV
RN2105MFV,
2106MFV
RN2101MFV to
2106MFV
RN2101MFV to
2106MFV
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
RN2101MFV to
2104MFV
RN2105MFV
RN2106MFV
Symbol
ICBO
ICEO
Test
Circuit
Test Condition
VCB = −50 V, IE = 0
―
VCE = −50 V, IB = 0
IEBO
VEB = −10 V, IC = 0
―
VEB = −5 V, IC = 0
hFE
―
VCE = −5 V,
IC = −10 mA
VCE (sat)
―
IC = −5 mA,
IB = −0.5 mA
VI (ON)
―
VCE = −0.2 V,
IC = −5 mA
Min Typ. Max Unit
―
―
−100
nA
―
―
−500
−0.82
―
−1.52
−0.38
―
−0.71
−0.17
―
−0.082 ―
−0.33
mA
−0.15
−0.078 ― −0.145
−0.074 ― −0.138
30
―
―
50
―
―
70
―
―
―
80
―
―
80
―
―
80
―
―
―
−0.1 −0.3
V
−1.1
―
−2.0
−1.2
―
−2.4
−1.3
―
−3.0
V
−1.5
―
−5.0
−0.6
―
−1.1
−0.7
―
−1.3
VI (OFF)
―
VCE = −5 V,
IC = −0.1 mA
−1.0
―
−1.5
V
−0.5
―
−0.8
fT
―
VCE = −10V,
IC = −5mA
―
250
―
MHz
Cob
―
VCB = −10 V, IE = 0,
f = 1 MHz
―
0.9
―
pF
3.29
4.7
6.11
7
10
13
R1
―
15.4
22
28.6
kΩ
32.9
47
61.1
1.54
2.2
2.86
3.29
4.7
6.11
R1/R2
―
0.8
1.0
1.2
0.0376 0.0468 0.0562
―
0.08 0.1 0.12
2
2010-04-06
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