RN2101MFV 데이터 시트보기 (PDF) - Toshiba

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RN2101MFV

Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

RN2101MFV∼RN2106MFV

RN2101MFV IC - VI (OFF)

-10000

EMITTER

COMMON

VCE = -5 V

-1000

Ta = 100°C

25

-25

-100

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI (OFF) ( V)

-10000

RN2103MFV IC - VI (OFF)

EMITTER

COMMON

VCE = -5 V

-1000 Ta = 100°C

25

-25

-100

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI (OFF) ( V)

RN2105MFV IC - VI (OFF)

-10000

EMITTER

COMMON

VCE = -5 V

-1000

Ta = 100°C 25

-25

-100

-10

-00

-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE　VI (OFF) ( V)

RN2102MFV IC - VI (OFF)

-10000

-1000

Ta = 100°C

25

-25

-100

EMITTER

COMMON

VCE = -5V

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI (OFF) ( V)

RN2104MFV IC - VI (OFF)

-10000

-1000 Ta = 100°C

25

-25

-100

EMITTER

COMMON

VCE = -5V

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE VI (OFF) ( V)

RN2106MFV IC - VI (OFF)

-10000

-1000

Ta = 100°C 25

-25

-100

-10

-00

EMITTER

COMMON

VCE = -5V

-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE VI (OFF) ( V)

4

2010-04-06

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