IRF710 데이터 시트보기 (PDF) - New Jersey Semiconductor

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IRF710

N-Channel Power MOSFETs, 2.25 A, 350-400 V

New Jersey Semiconductor 

IRF710-713

MTP2N35/2N40

Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)

Symbol

Characteristic

Typ

Max

Unit

Source-Drain Diode Characteristics

VSD

Diode Forward Voltage

IRF710/711

1.6

V

IRF712/713

1.5

V

tn-

Reverse Recovery Time

380

ns

Notes

1. Tj-+25°C to +150"C

2. Pulse lost: Pulse width < 80 ps. Duty cyde<1%

3. Switching time measurements performed on LEM TR-58 test equipment.

Test Conditions

ls = 1 .5 A; VGS = 0 V

ls -1.3 A; Ves = 0 V

Is -1.5 A; dls/dt = 25 A/f<S

Typical Performance Curves

Figure 1 Output Characteristics

Figure 2 Static Drain to Source Resistance

vs Drain Current

1>12S'C

VM-DHAIN TO SOURCE VOLTAG£-V

Figure 3 Transfer Characteristics

V(a—OAT8 TO SOURCE VOLTAGE—V

0 0.6 1.0 1.5 2.0 2.5 3.0

ID-DRAIN CURRENT-A

PCIIMCF

Figure 4 Temperature Variation of Gate to

Source Threshold Voltage

I-

K o..

3

£ o.«

? tn

-SO

0

50

100

1

V-JUNCTION TEMPERATUM-'C

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