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ATF-34143 데이터 시트보기 (PDF) - Agilent Technologies, Inc

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ATF-34143 Datasheet PDF : 15 Pages
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ATF-34143 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
ID
Pdiss
Pin max
TCH
TSTG
θjc
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Total Power Dissipation[4]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[5]
Units
V
V
V
mA
mW
dBm
°C
°C
° C/W
Absolute
Maximum
5.5
-5
-5
Idss [3]
725
17
160
-65 to 160
165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiescent conditions.
3. VGS = 0 volts.
4. Source lead temperature is 25°C.
Derate 6␣ mW/ °C for TL > 40°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
6. Under large signal conditions, VGS may
swing positive and the drain current
may exceed Idss. These conditions are
acceptable as long as the maximum
Pdiss and Pin max ratings are not
exceeded.
250
+0.6 V
200
150
0V
100
50
–0.6 V
0
0
2
4
6
8
VDS (V)
Figure 1. Typical/Pulsed I-V Curves [6].
(VGS = -0.2 V per step)
Product Consistency Distribution Charts [7]
120
100
80
-3 Std
60
+3 Std
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
40
20
0
29 30
31 32 33
OIP3 (dBm)
34 35
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
120
Cpk = 2.69167
120
Cpk = 2.99973
Std = 0.04
Std = 0.15
100
9 Wafers
100
9 Wafers
Sample Size = 450
Sample Size = 450
80
80
-3 Std +3 Std
60
-3 Std
+3 Std
60
40
40
20
20
0
0
0.2
0.4
0.6
0.8
NF (dB)
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
0
16 16.5 17 17.5 18 18.5 19
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
Notes:
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production
test board. This circuit represents a
trade-off between an optimal noise
match and a realizeable match based
on production test requirements.
Circuit losses have been de-embedded
from actual measurements.
2

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