ATF-34143 데이터 시트보기 (PDF) - Agilent Technologies, Inc
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ATF-34143 Datasheet PDF : 15 Pages
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ATF-34143 Typical Performance Curves, continued
25
1.5
85 °C
25 °C
-40 °C
20
1.0
15
0.5
10
0
0
2000
4000
6000 8000
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature at VDS = 4 V, IDS = 60 mA.
33
31
29
27
OIP3
25
23
P1dB
21
85 °C
25 °C
-40 °C
19
17
0
2000 4000 6000 8000
FREQUENCY (MHz)
Figure 15. P1dB, IP3 vs. Frequency and
Temperature at VDS = 4 V, IDS = 60 mA.[1]
35
5.0
4.5
30
Gain 4.0
OP1dB
25
OIP3 3.5
NF
20
3.0
2.5
15
2.0
10
1.5
1.0
5
0.5
0
0
0 20 40 60 80 100 120 140
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 3.9 GHz Tuned for
Noise Figure.[1]
30
5.0
27
4.5
24
4.0
21
3.5
18
Gain
OP1dB
3.0
15
OIP3 2.5
NF
12
2.0
9
1.5
6
1.0
3
0.5
0
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 5.8 GHz Tuned for
Noise Figure.[1]
25
20
15
10
5
3V
0
4V
-5
0
50
100
150
IDS (mA)
Figure 18. P1dB vs. IDS Active Bias
Tuned for NF @ 4 V, 60 mA at 2 GHz.
25
20
15
10
5
3V
0
4V
-5
0
50
100
150
IDS (mA)
Figure 19. P1dB vs. IDS Active Bias
Tuned for min NF @ 4 V, 60 mA at
900MHz.
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ␣ =␣ 10␣ mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
5
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