STB4NK60Z-1_11 데이터 시트보기 (PDF) - STMicroelectronics

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STB4NK60Z-1_11

N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STMicroelectronics 

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Electrical characteristics

Figure 14. Normalized on resistance vs

temperature

Figure 15. Source-drain diode forward

characteristic

Figure 16. Avalanche energy vs temperature

Doc ID 8882 Rev 7

9/28

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