BT139-600 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT139-600 Datasheet PDF : 12 Pages
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Philips Semiconductors
BT139 series
Triacs
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BT139-600
TO-220AB
BT139-600F
BT139-800
BT139-800F
BT139-800G
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
4. Limiting values
Version
SOT78
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
BT139-600
BT139-800
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 99 °C;
Figure 4 and Figure 5
ITSM
non-repetitive peak on-state
full sine wave; Tj = 25 °C
current
prior to surge; Figure 2 and
Figure 3
t = 20 ms
t = 16.7 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
IGM
VGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min Max
-
600 [1]
-
800
-
16
Unit
V
V
A
-
155
A
-
170
A
-
120
A2s
-
50
-
50
-
50
-
10
-
2
-
5
-
5
-
0.5
−40 +150
-
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13358
Product data sheet
Rev. 04.00 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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