BT139-600 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT139-600

Triacs

NXP Semiconductors. 

Philips Semiconductors

BT139 series

Triacs

Table 5: Static characteristics …continued

Tj = 25 °C unless otherwise stated.

Symbol Parameter

Conditions

VGT

gate trigger

VD = 12 V;

voltage

IT = 0.1 A;

Figure 7

VD = 400 V;

IT = 0.1 A;

Tj = 125 °C

ID

off-state

VD = VDRM(max);

leakage current Tj = 125 °C

7. Dynamic characteristics

BT139

BT139-F

BT139-G

Unit

Min Typ Max Min Typ Max Min Typ Max

-

0.7 1.5 -

0.7 1.5 -

0.7 1.5 V

0.25 0.4 -

0.25 0.4 -

0.25 0.4 -

V

-

0.1 0.5 -

0.1 0.5 -

0.1 0.5 mA

Table 6: Dynamic characteristics

Symbol Parameter Conditions

dVD/dt

dVcom/dt

tgt

critical rate of

rise of off-state

voltage

VDM = 67 %

VDRM(max);

Tj = 125 °C;

exponential

waveform; gate

open circuit

critical rate of

change of

commutating

voltage

VDM = 400 V;

Tj = 95 °C;

IT(RMS) = 16 A;

dIcom/dt = 7.2 A/ms;

gate open circuit

gate controlled

turn-on time

ITM = 20 A;

VD = VDRM(max);

IG = 0.1 A;

dIG/dt = 5 A/µs

BT139

BT139-F

BT139-G

Unit

Min Typ Max Min Typ Max Min Typ Max

200 250 -

50 250 -

200 250 -

V/µs

10 20 -

-

20 -

10 20 -

V/µs

2-

-

2

-

2

-

µs

9397 750 13358

Product data sheet

Rev. 04.00 — 6 July 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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