FDS4559 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4559

60V Complementary PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

WDSS

Single Pulse Drain-Source VDD = 30 V, ID = 4.5 A

Q1

Avalanche Energy

IAR

Maximum Drain-Source

Q1

Avalanche Current

Off Characteristics

BVDSS

Drain-Source Breakdown VGS = 0 V, ID = 250 µA

Q1

Voltage

VGS = 0 V, ID = –250 µA

Q2

∆BVDSS Breakdown Voltage

ID = 250 µA, Referenced to 25°C

Q1

∆TJ

Temperature Coefficient

ID = –250 µA, Referenced to 25°C

Q2

IDSS

Zero Gate Voltage Drain VDS = 48 V, VGS = 0 V

Q1

Current

VDS = –48 V, VGS = 0 V

Q2

IGSS

Gate-Body Leakage

VGS = +20 V, VDS = 0 V

Q1

VGS = +20 V, VDS = 0 V

Q2

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

Q1

VDS = VGS, ID = –250 µA

Q2

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA, Referenced to 25°C

Q1

ID = –250 µA, Referenced to 25°C

Q2

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 4.5 A

Q1

VGS = 10 V, ID = 4.5 A, TJ = 125°C

VGS = 4.5 V, ID = 4 A

VGS = –10 V, ID = –3.5 A

Q2

VGS = –10 V, ID = –3.5 A, TJ = 125°C

VGS = –4.5 V, ID = –3.1 A

ID(on)

On-State Drain Current

VGS = 10 V, VDS = 5 V

Q1

VGS = –10 V, VDS = –5 V

Q2

gFS

Forward Transconductance VDS = 10 V, ID = 4.5 A

Q1

VDS = –5 V, ID = –3 5 A

Q2

Dynamic Characteristics

Ciss

Input Capacitance

Q1

Q1

VDS = 25 V, VGS = 0 V,

Q2

Coss

Output Capacitance

f = 1.0 MHz

Q1

Q2

Q2

Crss

Reverse Transfer

VDS = –30 V, VGS = 0 V,

Q1

Capacitance

f = 1.0 MHz

Q2

90 mJ

4.5 A

60

–60

58

–49

V

mV/°C

1

µA

–1

+100 nA

+100

1

2.2 3

V

–1 –1.6 –3

–5.5

mV/°C

4

42 55 mΩ

72 94

55 75

82 105

130 190

105 135

20

A

–20

14

S

9

650

pF

759

80

pF

90

35

pF

39

Switching Characteristics (Note 2)

td(on)

Turn-On Delay Time

Q1

Q1

VDD = 30 V, ID = 1 A,

Q2

tr

Turn-On Rise Time

VGS = 10V, RGEN = 6 Ω

Q1

Q2

td(off)

Turn-Off Delay Time

Q2

Q1

VDD = –30 V, ID = –1 A,

Q2

tf

Turn-Off Fall Time

VGS = –10 V, RGEN = 6 Ω

Q1

Q2

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Q1

Q1

VDS = 30 V, ID = 4.5 A, VGS = 10 V

Q2

Q1

Q2

Q2

VDS = –30 V, ID = –3.5 A, VGS = –10V Q1

Q2

11 20

ns

7 14

8 18

ns

10 20

19 35

ns

19 34

6 15

ns

12 22

12.5 18

nC

15 21

2.4

nC

2.5

2.6

nC

3.0

FDS4559 Rev C1(W)

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