MPSH24(1997) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MPSH24 Datasheet PDF : 2 Pages
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Discrete POWER & Signal
Technologies
MPSH24
MMBTH24
C
C
BE
TO-92
SOT-23
Mark: 3A
E
B
NPN RF Transistor
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100 µA to 20 mA range to 300 MHz, and low
frequency drift common-base VHF oscillator applications
with high output levels for driving FET mixers. Sourced
from Process 47. See MPSH11 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
4.0
IC
Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH24
625
5.0
83.3
200
*MMBTH24
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
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