FQA24N50F 데이터 시트보기 (PDF) - Inchange Semiconductor

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FQA24N50F

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

FQA24N50F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA

500

V

VGS(th)

Gate Threshold Voltage

VDS=±30V; ID=0.25mA

3

5

V

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID=12A

590 650

mΩ

IGSS

IDSS

VSDF

Gate-Source Leakage Current

Drain-Source Leakage Current

Diode forward voltage

VGS= ±30V;VDS= 0V

VDS= 500V; VGS= 0V;Tj=25℃

VDS= 400V; VGS= 0V;Tj=125℃

ISD=24A, VGS = 0 V

±0.1 μA

50

500

μA

1.4

V

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