B1018A 데이터 시트보기 (PDF) - New Jersey Semiconductor
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B1018A Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Ona.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1018A
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(Sa.)= -0.5V(Max)@lc= -4A
• High Current Capability- lc= -7A
• Complement to Type 2SD1411A
APPLICATIONS
• High current switching applications.
• Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ TC=25'C
Tj
Junction Temperature
-1
A
2
W
30
150
'C
Tstg
Storage Temperature Range
-55-150
'C
1 •<
FIM: 1 Base
2 Collector
.,
3 Emitter
""
TO-220F package
B-
- C-
-S-
. 1£ ": •• •• ;•
u
f:
•i
A
L--
? -R-
K
• -D
-N-
J --
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0,90
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
$ 2.65 2.85
U 6.40 6.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable; at the time of going
10 press. IKmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use."
N.I Senii-Coiuluctors encourages customers to verily that datasheets are current before placing orders.
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