KSB834Y 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSB834Y

PNP Silicon Epitaxial Transistor

Fairchild Semiconductor 

Typical Characteristics

-5.0

EMITTER COMMON

-4.5

TC=25℃

-4.0

-3.5

-3.0

IB=-80mA IB=-70mA

IB=-60mA

IB=-50mA

-2.5

IB=-40mA

IB=-30mA

-2.0

-1.5

IB=-20mA

-1.0

IB=-10mA

-0.5

-0.0

-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0

VCE(V), COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

EMITTER COMMON

IC/IB=10

-1

-0.1

-0.01

-0.01

-0.1

-1

IC(A), COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

-10

IC MAX. (Pulse)

IC MAX. (Continous)

1s

-1

-0.1

-1

-10

-100

VCE(V), COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

©2001 Fairchild Semiconductor Corporation

1000

100

EMITTER COMMON

VCE=-5V

10

1

-0.01

-0.1

-1

IC(A), COLLECTOR CURRENT

Figure 2. DC current Gain

-4.0

EMITTER COMMON

-3.5

VCE=-5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

-0.0

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

VBE(V) BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

40

35

30

25

20

15

10

5

0

0

25

50

75

100

125

150

175

TC(℃), CASE TEMPERATURE

Figure 6. Power Derating

Rev. A1, June 2001

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