BDW83D 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BDW83D

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

Silicon NPN Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BDW83D

DESCRIPTION

• Collector Current -lc= 15A

• High DC Current Gain-hFE= 750(Min)@ lc= 6A

• Complement to Type BDW84D

APPLICATIONS

• Designed for general purpose amplifier and low speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

1 " ff

1 23

R1

R2

PIN 1.BASE

2.COLLECTOR

3. BETTER

TO-3PN package

VCER Collector-Emitter Voltage

120

V

VCEO Collector-Emitter Voltage

120

V

VEBO Emitter-Base Voltage

5

V

r

G

Ic

Collector Current-Continuous

15

A

IB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25'C

PC

Collector Power Dissipation

@ TC=25"C

Tj

Junction Temperature

Tstg

Storage Temperature Range

0.5

A

3.5

W

150

150

°C

-65-150 r

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

0.83 'CM/

Thermal Resistance,Junction to Ambient 35.7 °C/W

mm

DIM WIN MAX

A 19.90 20.10

8 15.50 15.70

C 4.70 4.90

D 0.90 1.10

E 1.90 2.10

F 3.40 3.60

G 2.90 3.10

H 3.20 3.40

J 0.595 0.605

K 20.50 20.70

L 1.90 2.10

N 10.89 10.91

q 4.90 5.10

R 3.35 3.45

S 1.995 2.005

u 5.90 6.10

Y 9.90 10.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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