SGH5N120RUF 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGH5N120RUF Datasheet PDF : 7 Pages
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1000
800
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
600
Cies
400
200
0
1
Coes
Cres
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
T = 25℃
C
TC = 125℃
100
tf
td(off)
10
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
100
tr
Common Emitter
VGE = ± 15V, RG = 30Ω
T = 25℃
C
TC = 125℃
td(on)
10
2
4
6
8
10
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
V = 600V, V = ± 15V
CC
GE
IC =5A
T = 25℃
C
TC = 125℃
tr
td(on)
10
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 5A
T = 25℃
C
T = 125℃
C
Eoff
Eon
Eoff
100
10
100
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 30Ω
T = 25℃
C
T = 125℃
C
tf
100
td(off)
2
4
6
8
10
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH5N120RUF Rev. B2
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