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1N60 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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1N60
Schottky Barrier Diode
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
1N60 Datasheet PDF : 2 Pages
1
2
R
o
HS
1N60P
Electrical Characteristics
WEJ ELECTRONIC CO.,LTD
T
j
=25
℃
Parameter
Forward voltage
Test Conditions
I
F
=1mA
Reverse current
I
F
=30mA
I
F
=200mA
V
R
=15V
Junction capacitance
Reverse recovery time
V
R
=1V, f=1MHz
V
R
=10V, f=1MHz
I
F
=I
R
=1mA I
rr
=1mA R
C
=100
Type Symbol Min Typ Max Unit
1N60
V
F
0.32 0.5 V
1N60P
V
F
1N60
V
F
0.24 0.5 V
0.65 1.0 V
1N60P
V
F
0.65 1.0 V
1N60
I
R
1N60P
I
R
1N60
C
J
0.1 0.5
μ
A
0.5 1.0
μ
A
2.0
pF
1N60P
C
J
t
rr
6.0
pF
1.0 ns
Dimensions in mm
Cathode
φ
2.0 max.
Cathode identification
26 min.
4.2 max.
Standard Glass Case
JEDEC DO 35
φ
0.55 max.
Anode
26 min.
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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