EL5111T 데이터 시트보기 (PDF) - Renesas Electronics
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EL5111T Datasheet PDF : 14 Pages
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EL5111T
Electrical Specifications VS+ = +5V, VS- = 0V, RL = 1k to 2.5V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITION
MIN TYP MAX UNIT
INPUT CHARACTERISTICS
VOS
TCVOS
IB
RIN
CIN
CMIR
Input Offset Voltage
Average Offset Voltage Drift (Note 6)
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
VCM = 2.5V
VCM = 2.5V
5 18 mV
7
µV/°C
2 60 nA
1
G
2
pF
-0.5
+5.5 V
CMRR
Common-Mode Rejection Ratio
AVOL
Open-Loop Gain
OUTPUT CHARACTERISTICS
For VIN from -0.5V to 5.5V
0.5V VOUT 4.5V
45 68
dB
62 82
dB
VOL
VOH
ISC
Output Swing Low
Output Swing High
Short-circuit Current
IOUT
Output Current
POWER SUPPLY PERFORMANCE
IL = -4.2mA
IL = +4.2mA
VCM = 2.5V, Source: VOUT short to VS-,
Sink: VOUT short to VS+
60 150 mV
4.85 4.94
V
±110
mA
±70
mA
(VS+) - (VS-)
IS
PSRR
Supply Voltage Range
Supply Current
Power Supply Rejection Ratio
VCM = 2.5V, No load
Supply is moved from 4.5V to 19V
4.5
19
V
3.3 4 mA
60 75
dB
DYNAMIC PERFORMANCE
SR
tS
BW
GBWP
PM
Slew Rate (Note 7)
Settling to +0.1% (Note 8)
-3dB Bandwidth
Gain-Bandwidth Product
Phase Margin
1V VOUT 4V, 20% to 80%
AV = +1, VOUT = 2V step,
RL = 1k1k (probe), CL = 1.5pF
RL = 1kCL = 1.5pF
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
75
V/µs
90
ns
60
MHz
32
MHz
50
°
Electrical Specifications VS+ = +18V, VS- = 0V, RL = 1k to 9V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITION
MIN TYP MAX UNIT
INPUT CHARACTERISTICS
VOS
TCVOS
IB
RIN
CIN
CMIR
Input Offset Voltage
Average Offset Voltage Drift (Note 6)
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
VCM = 9V
VCM = 9V
-0.5
5
18
mV
9
µV/°C
2
60
nA
1
G
2
pF
+18.5 V
CMRR
AVOL
Common-Mode Rejection Ratio
Open-Loop Gain
For VIN from -0.5V to 18.5V
0.5V VOUT 17.5V
53
75
dB
62
95
dB
FN6894 Rev 0.00
May 27, 2010
Page 4 of 14
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