1N60A-T92-K 데이터 시트보기 (PDF) - Unisonic Technologies
부품명
상세내역
제조사
1N60A-T92-K Datasheet PDF : 8 Pages
| |||
1N60A
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
Power MOSFET
Breakdown Voltage vs. Temperature
1.
2
VGS=0V
ID=250μA
1.
1
1.
0
0.
9
0.
8 -100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
On-Resistance vs. Temperature
3.
0
2.
VGS=10V
ID=0.5A
5
2.
0
1.
5
1.
0
0.
5
0.
0 -100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
Max. Safe Operating Area
Operation in This
101 Area is Limited by
RDS(on)
100
100μs
1m
10ms s
10-
1 Tc=25℃
TJ=150℃
10- Single Pulse
2 100
101
102
103
Drain-Source Voltage, VDS (V)
Thermal Response
Max. Drain Current vs. Case Temperature
1.0
0.5
0.
0 25
50
75
100 125 150
Case Temperature, TC (℃)
0.5
100
0.2
0.1 0.05
0.02
10-1 0.01
Single pulse
θJC (t) = 3.45℃/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-091,B
Share Link: 