STD35NF06LT4 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STD35NF06LT4

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

STMicroelectronics 

STD35NF06L

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 35 A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35 A,

di/dt = 100 A/µs,

VDD = 30 V, Tj = 150 °C

(see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

35

A

-

140 A

-

1.5 V

80

ns

-

200

nC

5

A

Doc ID 7662 Rev 5

5/14

Share Link: